Vous êtes ici : Accueil > ACTUALITÉS > CEA-Leti at IEDM 2024 - San Francisco

Evénement | Nouvelles technologies


CEA-Leti at IEDM 2024 - San Francisco

Du 08/12/2024 au 11/12/2024
Hilton, San Francisco Union Square

​​​​​​​​​​​​​​​​​​​​​​​​​​​​​EVENT​

CEA-Leti to Present Research Breakthroughs in Non-Volatile Memory, RF and FD-SOI, and Other Highlights at December IEDM Gathering​

CEA-Leti will highlight its most recent research advances in several fields at the 2024 International Electron Devices Meeting (IEDM), Dec. 7-11, at the Hilton San Francisco Union Square. Presentations include three R&D firsts:​

  • ​ferro-based memory scaling integrated into the back-end-of-line (BEOL) at the 22nm FD-SOI technology node
  • an integrated phase modulator and sensor (IPMS) offering ​​improved scalability, compactness, and intrinsic optical alignment for digital optical phase conjugation (DOPC) applications, and
  • the first adaptation of the forward-forward algorithm for resistive memory. 

"CEA-Leti, together with its academic and industrial partners, will present cutting-edge results in the fields of low-power components, quantum technologies, RF, heterogeneous integration, emerging memories, and new computing paradigms,” said Thomas Ernst, scientific director, CEA-Leti. 

DISCOVER CEA-LETI’S MAJOR SCIENTIFIC RESULTS AT IEDM 2024 ​​​

​Session 8.1:
​​Monday, Dec. 9 @ 1:35 p.m.
Continental 7-9

by Arnaud Verdant“A 58×60 π/2-Resolved Integrated Phase Modulator And Sensor With Intra-Pixel Processing”



Session 9.4:
Monday, Dec. 9 @ 2:50 p.m.
Imperial A

by Luca Lucci

“CMOS compatible 200 mm GaN-on-Si HEMTs for RF switch applications with 36 dBm CW power handling and 200 fs RonCoff”​

Session 10.6:
Monday, Dec. 9 @ 4:05 p.m.
Imperial B

a collaborative paper with Bruna Paz of Quobly

“FD-SOI Platform for Quantum Computing”​

Session 11.2:
Tuesday, Dec. 10 @ 9:30 a.m.
Grand Ballroom A

by Simon Martin and Laurent Grenouillet

“Hf0.5Zr0.5O2​ FeRAM scalability demonstration at 22nm FD-SOI node for embedded applications”​

Session 15.3:
Tuesday, Dec. 10 @ 9:55 a.m.
Continental 5

a collaborative paper with Shuhan Liu of Stanford University

“Edge Continual Training and Inference with RRAM-Gain Cell Memory Integrated on Si CMOS”


Session 13.4:
Tuesday, Dec. 10 @ 10:45 a.m.
Continental 1-3

a collaborative paper with Bastien Imbert of Aix-Marseille University / CNRS

“Forward-Forward Learning Exploiting Low-Voltage Reset of RRAM”​


​​​​​Session 34.7:
Wednesday, Dec. 11 @ 12 p.m.
Continental 5

by Alexis Divay

“Fine characterization and Modeling of the Frequency Dependence of TDDB in RF domain (F>10GHz)”​

​​

​Dive deeper into More-than-Moore applications: register for CEA-Leti Devices Workshop

​During the Leti Devices Workshop, CEA-Leti experts will share their visions, innovations and achievements in the field of More than Moore applications. Don’t miss this opportunity to meet with partners and CEA-Leti experts and explore the potential for R&D partnerships in US. ​Leti Devices Workshop will take place in San Francisco during IEDM 2024, near the Hilton San Francisco Union Square.

December 8, 2024 | San Francisco, CA ​​​

From materials to system innovations, shaping the future of global connectivity​​

Connectivity is one of the main driving forces behind every connected and intelligent system. Deep innovations are required in terms of materials, devices and systems in order to to ensure efficiency, sustainability and low power consumption. ​



ABOUT THE IEDM

IEEE International Electron Devices Meeting (IEDM) is the world’s preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation.​​​

MEF is a unique venue operated by engineers among the key players in the field, bringing together MEMS researchers, developers, and engineers from all over the world to look at the current state of MEMS technology, which is considered as key technologies of the 21st century, and the future of the technology through the next decade. The MEF has been held its start in 2009 and regularly 850 participants visit the two-day event each year.

DL_Icon.pngMore information on ​​IEDM website


​​​

Infos Pratiques

Haut de page

CEA-Leti contacts

Marion ​​​Levy

Press officer






Evénements