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Reconfigurable field effect transistor for advanced CMOS: Advantages and limitations

Publié le 29 mars 2018
Reconfigurable field effect transistor for advanced CMOS: Advantages and limitations
Auteurs
Navarro C., Barraud S., Martinie S., Lacord J., Jaud M.-A., Vinet M.
Year2017-0144
Source-TitleSolid-State Electronics
Affiliations
CEA-LETI, Minatec Campus, Grenoble, France
Abstract
Reconfigurable FETs (RFETs) are optimized in planar Fully Depleted (FD) SOI. Their basics, electrostatics and performance are studied and compared with standard 28 nm FDSOI and other RFETs results in the literature. The main challenge for future broad adoption is analyzed and commented. Finally, some tips to improve the performance such as the asymmetric silicidation at source/drain are discussed. © 2016 Elsevier Ltd
Author-Keywords
FDSOI, Polarity gate, Reconfigurable FET, Reversible FET, RFET, Schottky barrier
Index-Keywords
CMOS integrated circuits, Schottky barrier diodes, FDSOI, Polarity gate, Reconfigurable, Reversible FET, RFET, Schottky barriers, Field effect transistors
ISSN381101
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