Reconfigurable field effect transistor for advanced CMOS: Advantages and limitations
| Auteurs | Navarro C., Barraud S., Martinie S., Lacord J., Jaud M.-A., Vinet M. |
| Year | 2017-0144 |
| Source-Title | Solid-State Electronics |
| Affiliations | CEA-LETI, Minatec Campus, Grenoble, France |
| Abstract | Reconfigurable FETs (RFETs) are optimized in planar Fully Depleted (FD) SOI. Their basics, electrostatics and performance are studied and compared with standard 28 nm FDSOI and other RFETs results in the literature. The main challenge for future broad adoption is analyzed and commented. Finally, some tips to improve the performance such as the asymmetric silicidation at source/drain are discussed. © 2016 Elsevier Ltd |
| Author-Keywords | FDSOI, Polarity gate, Reconfigurable FET, Reversible FET, RFET, Schottky barrier |
| Index-Keywords | CMOS integrated circuits, Schottky barrier diodes, FDSOI, Polarity gate, Reconfigurable, Reversible FET, RFET, Schottky barriers, Field effect transistors |
| ISSN | 381101 |
| Lien vers article | Link |