Investigations on the Geometry Effects and Bias Configuration on the TID Response of nMOS SOI Tri-Gate Nanowire Field-Effect Transistors
| Auteurs | Riffaud J., Gaillardin M., Marcandella C., Martinez M., Paillet P., Duhamel O., Lagutere T., Raine M., Richard N., Andrieu F., Barraud S., Vinet M., Faynot O. |
| Year | 2018-0014 |
| Source-Title | IEEE Transactions on Nuclear Science |
| Affiliations | DAM, DIF, CEA, ArpajonCedex, France, LETI-Minatec, CEA, Grenoble Cedex, France |
| Abstract | This paper investigates the total ionizing dose (TID) sensitivity of nanowire (NW) field-effect transistors (NWFETs). Both X-ray irradiations and self-consistent calculations of charge trapping in dielectrics are performed to study their TID response. First of all, the impact of the NW geometry is investigated. The NWFET TID behavior exhibits a strong dependence as a function of the NWs width while shortening the gate length does not significantly change the TID characteristics of optimized narrow NWFETs. Furthermore, the effect of the bias configuration used during irradiation is discussed to state if nMOS NWFETs could withstand significant amount of TID in several operation conditions. © 1963-2012 IEEE. |
| Author-Keywords | 3-D, complementary metal-oxide-semiconductor (CMOS), FinFET, nanowire (NW), nMOS, NW field-effect transistor (NWFET), silicon-on-insulator (SOI), total ionizing dose (TID), ultra thin buried oxide (BOX) and body (UTBB), ultrathin SOI (UTSOI) |
| Index-Keywords | CMOS integrated circuits, Electrostatics, FinFET, Geometry, Ionizing radiation, Irradiation, Logic gates, Nanowires, Thallium compounds, Threshold voltage, Transistors, NMOS, NWFET, Thin SOI, Total Ionizing Dose, UTBB, UTSOI, Field effect transistors |
| ISSN | 189499 |
| Lien vers article | Link |