Demonstrating the Ultrathin Metal-Insulator-Metal Diode Using TiN/ZrO2-Al2O3-ZrO2 Stack by Employing RuO2 Top Electrode
| Auteurs | Jeon W., Kim Y., An C.H., Hwang C.S., Gonon P., Vallee C. |
| Year | 2018-0034 |
| Source-Title | IEEE Transactions on Electron Devices |
| Affiliations | Microelectronics Technology Laboratory, National Center for Scientific Research and CEA-LETI, Grenoble, France, Photo-Electronic Hybrids Research Center, Korea Institute of Science and Technology, Seoul, South Korea, Department of Materials Science and Engineering, Inter-university Semiconductor Research Center, Seoul National University, Seoul, South Korea, Grenoble Alpes University, Grenoble, France |
| Abstract | Metal-insulator-metal (MIM) diodes with ultrathin insulators are highly promising for a variety of applications, such as vertical integration technology. However, MIM diodes with thin enough structures have not been achieved in previous studies on diodes using Schottky emission or tunneling conduction asymmetry. In this paper, we demonstrate an MIM diode with an ultrathin, 5-nm ZrO2/Al2O3/ZrO2 insulator, using the work-function difference between the top and bottom electrodes. The rectifying properties of the diode were enhanced by employing RuO2 as an electrode, due to its high work function and the catalytic effect on oxygen decomposition, contributing to the suppression of trap-Assisted tunneling. This paper presents an important development in understanding MIM structures with respect to the electrical and chemical properties. © 1963-2012 IEEE. |
| Author-Keywords | |
| Index-Keywords | Capacitance, Diodes, Electrodes, Metal insulator boundaries, Metals, Oxygen vacancies, Ruthenium compounds, Semiconductor insulator boundaries, Work function, Capacitance voltage, Catalytic effects, Metal insulator metals, Trap assisted tunneling, Work-function difference, MIM devices |
| ISSN | 189383 |
| Lien vers article | Link |