Scanning microwave microscopy applied to semiconducting GaAs structures
| Auteurs | Buchter A., Hoffmann J., Delvallée A., Brinciotti E., Hapiuk D., Licitra C., Louarn K., Arnoult A., Almuneau G., Piquemal F., Zeier M., Kienberger F. |
| Year | 2018-0035 |
| Source-Title | Review of Scientific Instruments |
| Affiliations | Federal Institute of Metrology METAS, Lindenweg 50, Bern-Wabern, Switzerland, LNE, 29 Avenue Roger Hennequin, Trappes, France, Keysight Laboratories, Keysight Technologies, Inc., Gruberstrasse 40, Linz, Austria, Université Grenoble Alpes, Grenoble, France, CEA, LETI, MINATEC Campus, Grenoble, France, LAAS-CNRS, Université de Toulouse, CNRS, UPS, Toulouse, France |
| Abstract | A calibration algorithm based on one-port vector network analyzer (VNA) calibration for scanning microwave microscopes (SMMs) is presented and used to extract quantitative carrier densities from a semiconducting n-doped GaAs multilayer sample. This robust and versatile algorithm is instrument and frequency independent, as we demonstrate by analyzing experimental data from two different, cantilever- and tuning fork-based, microscope setups operating in a wide frequency range up to 27.5 GHz. To benchmark the SMM results, comparison with secondary ion mass spectrometry is undertaken. Furthermore, we show SMM data on a GaAs p-n junction distinguishing p- and n-doped layers. © 2018 Author(s). |
| Author-Keywords | |
| Index-Keywords | Calibration, Doping (additives), Electric network analyzers, Gallium arsenide, Mass spectrometry, Secondary ion mass spectrometry, Semiconducting gallium, Semiconductor junctions, Calibration algorithm, Frequency independent, P-n junction, Scanning microwave microscopes, Scanning microwave microscopies, Tuning forks, Vector network analyzers, Wide frequency range, Gallium compounds |
| ISSN | 346748 |
| Lien vers article | Link |