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High spatial resolution correlated investigation of Zn segregation to stacking faults in ZnTe/CdSe nanostructures

Publié le 1 octobre 2018
High spatial resolution correlated investigation of Zn segregation to stacking faults in ZnTe/CdSe nanostructures
Auteurs
Bonef B., Grenier A., Gerard L., Jouneau P.-H., André R., Blavette D., Bougerol C.
Year2018-0048
Source-TitleApplied Physics Letters
Affiliations
Université Grenoble Alpes, CEA, INAC, Grenoble, France, CEA-LETI, Grenoble, France, Université Grenoble Alpes, CNRS, Institut Néel, Grenoble, France, Normandy University, Groupe de Physique des Matériaux, INSA ROUEN, CNRS, Rouen, France
Abstract
The correlative use of atom probe tomography (APT) and energy dispersive x-ray spectroscopy in scanning transmission electron microscopy (STEM) allows us to characterize the structure of ZnTe/CdSe superlattices at the nanometre scale. Both techniques reveal the segregation of zinc along [111] stacking faults in CdSe layers, which is interpreted as a manifestation of the Suzuki effect. Quantitative measurements reveal a zinc enrichment around 9 at. % correlated with a depletion of cadmium in the stacking faults. Raw concentration data were corrected so as to account for the limited spatial resolution of both STEM and APT techniques. A simple calculation reveals that the stacking faults are almost saturated in Zn atoms (?66 at. % of Zn) at the expense of Cd that is depleted. © 2018 Author(s).
Author-Keywords
 
Index-Keywords
Cadmium compounds, Energy dispersive spectroscopy, High resolution transmission electron microscopy, II-VI semiconductors, Image resolution, Scanning electron microscopy, Selenium compounds, Transmission electron microscopy, X ray spectroscopy, Zinc, Atom-probe tomography, Concentration data, Energy dispersive X ray spectroscopy, High spatial resolution, Quantitative measurement, Scanning transmission electron microscopy, Spatial resolution, Suzuki effect, Stacking faults
ISSN36951
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