High spatial resolution correlated investigation of Zn segregation to stacking faults in ZnTe/CdSe nanostructures
Auteurs | Bonef B., Grenier A., Gerard L., Jouneau P.-H., André R., Blavette D., Bougerol C. |
Year | 2018-0048 |
Source-Title | Applied Physics Letters |
Affiliations | Université Grenoble Alpes, CEA, INAC, Grenoble, France, CEA-LETI, Grenoble, France, Université Grenoble Alpes, CNRS, Institut Néel, Grenoble, France, Normandy University, Groupe de Physique des Matériaux, INSA ROUEN, CNRS, Rouen, France |
Abstract | The correlative use of atom probe tomography (APT) and energy dispersive x-ray spectroscopy in scanning transmission electron microscopy (STEM) allows us to characterize the structure of ZnTe/CdSe superlattices at the nanometre scale. Both techniques reveal the segregation of zinc along [111] stacking faults in CdSe layers, which is interpreted as a manifestation of the Suzuki effect. Quantitative measurements reveal a zinc enrichment around 9 at. % correlated with a depletion of cadmium in the stacking faults. Raw concentration data were corrected so as to account for the limited spatial resolution of both STEM and APT techniques. A simple calculation reveals that the stacking faults are almost saturated in Zn atoms (?66 at. % of Zn) at the expense of Cd that is depleted. © 2018 Author(s). |
Author-Keywords | |
Index-Keywords | Cadmium compounds, Energy dispersive spectroscopy, High resolution transmission electron microscopy, II-VI semiconductors, Image resolution, Scanning electron microscopy, Selenium compounds, Transmission electron microscopy, X ray spectroscopy, Zinc, Atom-probe tomography, Concentration data, Energy dispersive X ray spectroscopy, High spatial resolution, Quantitative measurement, Scanning transmission electron microscopy, Spatial resolution, Suzuki effect, Stacking faults |
ISSN | 36951 |
Lien vers article | Link |