Massless Dirac Fermions in ZrTe2 Semimetal Grown on InAs(111) by van der Waals Epitaxy
| Auteurs | Tsipas P., Tsoutsou D., Fragkos S., Sant R., Alvarez C., Okuno H., Renaud G., Alcotte R., Baron T., Dimoulas A. |
| Year | 2018-0049 |
| Source-Title | ACS Nano |
| Affiliations | National Center for Scientific Research Demokritos, Athens, Greece, University Grenoble Alpes, Grenoble, France, Néel Institute, CNRS, Grenoble, France, CEA/INAC-MEM, Grenoble Cedex 9, France, Universite Grenoble Alpes, CNRS, CEA/Leti Minatec, LTM, Grenoble Cedex 9, France |
| Abstract | Single and few layers of the two-dimensional (2D) semimetal ZrTe2 are grown by molecular beam epitaxy on InAs(111)/Si(111) substrates. Excellent rotational commensurability, van der Waals gap at the interface and moiré pattern are observed indicating good registry between the ZrTe2 epilayer and the substrate through weak van der Waals forces. The electronic band structure imaged by angle resolved photoelectron spectroscopy shows that valence and conduction bands cross at the Fermi level exhibiting abrupt linear dispersions. The latter indicates massless Dirac Fermions which are maintained down to the 2D limit suggesting that single-layer ZrTe2 could be considered as the electronic analogue of graphene. © 2018 American Chemical Society. |
| Author-Keywords | 2D materials, massless Dirac Fermions, moiré pattern, molecular beam van der Waals epitaxy, semimetal, ZrTe2 |
| Index-Keywords | Arsenic compounds, Epitaxial growth, Graphene, III-V semiconductors, Indium arsenide, Interfaces (materials), Metalloids, Molecular beam epitaxy, Molecular beams, Photoelectron spectroscopy, Substrates, Van der Waals forces, Zirconium compounds, Angle resolved photoelectron spectroscopy, Electronic band structure, Linear dispersion, Massless dirac fermions, Two Dimensional (2 D), Van der waals, Van der Waals epitaxy, ZrTe2, Tellurium compounds |
| ISSN | 19360851 |
| Lien vers article | Link |