Compact modeling of nanoscale triple-gate junctionless transistors covering drift-diffusion to quasi-ballistic carrier transport
| Auteurs | Oproglidis T.A., Karatsori T.A., Barraud S., Ghibaudo G., Dimitriadis C.A. |
| Year | 2018-0064 |
| Source-Title | Solid-State Electronics |
| Affiliations | Aristotle University of Thessaloniki, Department of Physics, Thessaloniki, Greece, IMEP-LAHC Laboratory in Minatec, Parvis Louis Néel, Grenoble Cedex 16, France, LETI-CEA, 17 rue des Martyrs, Grenoble, France |
| Abstract | In this work, we extend our analytical compact model for nanoscale junctionless triple-gate (JL TG) MOSFETs, capturing carrier transport from drift-diffusion to quasi-ballistic regime. This is based on a simple formulation of the low-field mobility extracted from experimental data using the Y-function method, taking into account the ballistic carrier motion and an increased carrier scattering in process-induced defects near the source/drain regions. The case of a Schottky junction in non-ideal ohmic contact at the drain side was also taken into account by modifying the threshold voltage and ideality factor of the JL transistor. The model is validated with experimental data for n-channel JL TG MOSFETs with channel length varying from 95 down to 25 nm. It can be easily implemented as a compact model for use in Spice circuit simulators. © 2018 Elsevier Ltd |
| Author-Keywords | Compact modeling, Junctionless nanowires, Low-field mobility, Non-ideal ohmic contacts, Quasi-ballistic regime |
| Index-Keywords | Ballistics, Circuit simulation, Electric contactors, Field effect transistors, Nanotechnology, Ohmic contacts, SPICE, Threshold voltage, Carrier scattering, Compact model, Junctionless transistors, Low field mobility, Non ideals, Quasi-ballistic, Schottky junctions, Source/drain regions, MOSFET devices |
| ISSN | 381101 |
| Lien vers article | Link |