Atom probe tomography for advanced nanoelectronic devices: Current status and perspectives
| Auteurs | Barnes J.P., Grenier A., Mouton I., Barraud S., Audoit G., Bogdanowicz J., Fleischmann C., Melkonyan D., Vandervorst W., Duguay S., Rolland N., Vurpillot F., Blavette D. |
| Year | 2018-0068 |
| Source-Title | Scripta Materialia |
| Affiliations | Univ. Grenoble Alpes, Grenoble, France, CEA, LETI, MINATEC Campus, Grenoble, France, IMEC, Kapeldreef 75, Leuven, Belgium, Normandie Univ, UNIROUEN, INSA Rouen, CNRS, Groupe de Physique des Matériaux, Rouen, Belgium, Dept Physics, KULeuven, Belgium |
| Abstract | Atom probe tomography is unique in its ability to image in 3D at the atomic scale and measure composition in a semiconductor device with high sensitivity. However it suffers from many artefacts. The current state of the art of nanoelectronic device analysis by atom probe is addressed and the challenges in device analysis in the next ten years are laid out. Finally the improvements necessary in sample preparation, instrumentation and reconstruction procedures are discussed. © 2017 Acta Materialia Inc. |
| Author-Keywords | Atom probe, Nanoelectronics, Reconstruction |
| Index-Keywords | Image reconstruction, Nanoelectronics, Probes, Semiconductor devices, Atom probe, Atom probe tomography, Device analysis, High sensitivity, Nanoelectronic devices, Reconstruction procedure, Sample preparation, State of the art, Atoms |
| ISSN | 13596462 |
| Lien vers article | Link |