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Comparison of HF and HCl cross-contamination between different ENTEGRIS FOUP platforms and Cu-coated wafers

Publié le 29 mars 2018
Comparison of HF and HCl cross-contamination between different ENTEGRIS FOUP platforms and Cu-coated wafers
Auteurs
Herrán F., González-Aguirre P., Beitia C., Ohlsen J., Lundgren J., Fontaine H.
Year2017-0154
Source-TitleMicroelectronic Engineering
Affiliations
Université Grenoble Alpes, CEA-Leti, MINATEC Campus, 17 rue des Martyrs, Cedex 9, France, Entegris, SAS, Parc Centr'Alp Ouest, 196 rue du Rocher de Lorzier, Moirans, France
Abstract
In this work, a comparative study of three different Entegris FOUP platforms and materials (PC, PC/CP and EBM/CNT) is carried out in order to assess and compare their capacity to be contaminated by HF and HCl, their molecular outgassing caused by the same contamination dose and their actual contamination transfer to Cu-coated wafers exposed within each FOUP. The results presented hereby allow us to evidence the higher mobility and affinity of the HF for the polymers of the FOUP and the Cu-coated wafers with respect to the HCl case. It is also demonstrated that high outgassing concentrations are not directly related to a large contamination transfer to wafers since each phenomenon is predominantly governed by the solubility or diffusivity parameter respectively. Furthermore, the EBM/CNT FOUP arises as the best of the three tested FOUPs in terms of contamination transfer to the Cu-coated wafers due to its lower HF and HCl affinities shown during the contamination phase regarding the others (PC and PC/CP FOUPs). Definitely, it is highly recommended to follow an experimental wafer exposure protocol in order to decide the suitability of a FOUP according to any sensitive fabrication step whatsoever. © 2016
Author-Keywords
Affinity, AMC, Diffusivity, Polymers, Solubility, Volatile acids
Index-Keywords
Coated materials, Diffusion, Plastic coatings, Polymers, Solubility, Affinity, Coated wafers, Comparative studies, Cross contamination, Entegris, Volatile acids, Wafer exposures, Contamination
ISSN1679317
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