Vous êtes ici : Accueil > Recent achievements in sub-10 nm DSA lithography for line/space patterning

Publications

Recent achievements in sub-10 nm DSA lithography for line/space patterning

Publié le 29 mars 2018
Recent achievements in sub-10 nm DSA lithography for line/space patterning
Auteurs
Navarro C., Nicolet C., Ariura F., Chevalier X., Xu K., Hockey M.A., Mumtaz M., Fleury G., Hadziioannou G., Legrain A., Zelsmann M., Gharbi A., Tiron R., Pain L., Evangelio L., Fernández-Regúlez M., Pérez-Murano F., Cayrefourcq I.
Year2017-0001
Source-TitleJournal of Photopolymer Science and Technology
Affiliations
ARKEMA France, Groupement de recherches de Lacq, RN 117, BP34- 64170, Lacq, France, ARKEMA K.K – Kyoto Technical Center (KTC), SCB No3, Kyoto Research Park, 93 Awatacho Chudoji, Shimogyo-ku, Kyoto, Japan, ARKEMA France, 420 rue d’Estienne d’Orves, Colombes, France, BREWER Science Inc, 2401 Brewer Drive, Rolla, MO, United States, LCPO Université Bordeaux-CNRS, B8 avenue des Facultés, Talence cedex, France, Univ. Grenoble Alpes, CNRS, LTM, Grenoble, France, CEA-LETI, Minatec Campus, 17 rue des Martyrs, Grenoble cedex 9, France, IMB-CNM, CSIC, Institut de Microelectrònica de Barcelona, Campus de la UAB, Bellaterra, Spain
Abstract
Silicon-containing and modified PS-b-PMMA high-? block copolymers materials were produced to achieve lamellar mesostructure as low as 14 nm intrinsic period (L0) and ordered by graphoepitaxy or chemoepitaxy processes. Line Edge Roughness (LER) measurements of 2.5 nm (3 ?) can be extracted from CD-SEM pictures of poly [(1,1-dimethyl silacyclobutane)-b-styrene] after etching step. Materials integrations on a 300 mm track process are highlighted. In fingerprint, new BCPs LWR L/S values are 1.5/1.1 nm in comparison to a graphoepitaxy flow where the LWR L/S values are 2.0/1.1 nm. Alternative methods to create high-resolution guiding patterns for directed self-assembly of block co-polymers and the scale-up to obtain industrial BCPs meeting electronic requirement are also reported. © 2017SPST.
Author-Keywords
Block copolymer, Chemoepitaxy, Directed self-assembly, Graphoepitaxy, High segregation strength, Lithography
Index-Keywords
 
ISSN9149244
Lien vers articleLink

Retour à la liste