Cu Nanoparticles on TiN by Electroless Deposition: Surface-Mediated Diameter Control and Application to Si Nanowires Growth
| Auteurs | Roussey A., Martinez E., Copéret C., Thieuleux C., Jousseaume V. |
| Year | 2017-0010 |
| Source-Title | Helvetica Chimica Acta |
| Affiliations | Univ. Grenoble Alpes, Grenoble, France, CEA, LETI, MINATEC Campus, Grenoble, France, University of Lyon, C2P2, UMR 5265 CNRS – ESCPE Lyon, 43 Bd du 11 Novembre 1918, Villeurbanne Cedex, France, Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir Prelog Weg 2, Zürich, Switzerland |
| Abstract | Cu Nanoparticles on TiN coated silicon substrates were prepared from well-defined molecular precursors [CuOtBu]4 in non-aqueous solutions. The formation of nanoparticles takes place via galvanic displacement and allows for the formation of narrowly distributed Cu nanoparticles with controlled size ranging from 8 to 35 nm through the control of the oxidation state of the TiN surface. The activity of these nanoparticles arrays in low temperature Si nanowires growth by the vapor-solid-solid mechanism was also investigated and larger Cu nanoparticles were found to yield higher Si nanowires density. © 2017 Wiley-VHCA AG, Zurich, Switzerland |
| Author-Keywords | Copper Nanoparticles, Electroless Deposition, Galvanic Displacement, Silicon Nanowires, Titanium Nitride |
| Index-Keywords | Deposition, Electroless plating, Nanowires, Silicon, Solutions, Temperature, Titanium compounds, Titanium nitride, Copper nanoparticles, Cu nano-particles, Diameter control, Galvanic displacement, Molecular precursor, Nonaqueous solutions, Silicon nanowires, Silicon substrates, Nanoparticles, copper nanoparticle, nanowire, silicon, titanium derivative, titanium nitride, unclassified drug, Article, catalyst, chemical composition, electron transport, galvanic current, low temperature, oxidation, particle size, precursor, priority journal, scanning electron microscopy, surface property, vapor, wet deposition |
| ISSN | 0018019X |
| Lien vers article | Link |