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A high chi track-compatible DSA for sub-10nm L/S patterning

Publié le 29 mars 2018
A high chi track-compatible DSA for sub-10nm L/S patterning
Auteurs
Guerrero D.J., Sakavuyi K., Xu K., Gharbi A., Tiron R., Servin I., Pain L., Claveau G., Stokes H., Harumoto M., Nicolet C., Chevalier X.
Year2017-0038
Source-TitleProceedings of SPIE - The International Society for Optical Engineering
Affiliations
Brewer Science, Inc., Rolla, MO, United States, CEA-LETI, MINATEC Campus, 17 Rue des Martyrs, Grenoble, France, SCREEN SPE Germany, Fraunhoferstrasse 7, Ismaning, Germany, ARKEMA France, Groupement de Recherches de Lacq, R.N. 117, Lacq, France
Abstract
High chi organic lamellar-forming block copolymers were prepared with 18 nm intrinsic period Lo value. The BCPs were coated on a neutral layer on silicon substrates and were either thermally annealed or exposed to solvent vapors both in a 300mm track. The effect of lowering the glass transition temperature (Tg) on the high chi BCP was investigated. Process temperatures and times were varied. It was found that the BCP having lower Tg exhibits faster kinetics and is able to reach alignment in a shorter time than a similar BCP having higher Tg. Fingerprint defect analysis also shows that the BCP with lower Tg has lower defects. The results show that fingerprint formation can be achieved with either ether or ester type solvents depending on the BCP used. The results show that a track process for solvent annealing of high-? BCPs is feasible and could provide the path forward for incorporation of BCP in future nodes. Finally, directed self-Assembly was demonstrated by implemented high chi polymers on a graphoepitaxy test vehicles. CD and line width roughness was evaluated on patterns with a multiplication factor up to 7. © 2017 SPIE.
Author-Keywords
300mm DSA track process, BCP, High chi, Solvent annealing
Index-Keywords
Annealing, Block copolymers, Defects, Self assembly, Solvents, Defect analysis, Directed self-assembly, High chi, Linewidth roughness, Multiplication factor, Process temperature, Silicon substrates, Solvent annealing, Glass transition
ISSN0277786X
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