InP based engineered substrates for photonics and RF applications
| Auteurs | Guiot E., Drouin A., Charles-Alfred C., Ledoux O., Martinez M., Cadieux C. |
| Year | 2017-0059 |
| Source-Title | CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology |
| Affiliations | SOITEC S.A., Parc Technologique des Fontaines, Bernin, France, Univ. Grenoble Alpes, Grenoble, France, CEA, LETI, Minatec Campus, Grenoble Cedex 9, France |
| Abstract | The use of Smart Cut™ technology enables the layer transfer of below 1?m thick InP films. Different receiver substrates such as GaAs, Ge, Sapphire or even Si have been evaluated to enable new functions: receiver lift off, lower fragility, better integration. We have demonstrated first InP-on-GaAs (both materials being semiconducting) with a direct bonding and a density of threading dislocations below 1e5/cm2. A multi quantum wells structure has been successfully grown on top. Second, we have demonstrated InP-on-GaAs (both materials being semiconducting) with either direct or insulating bonding. |
| Author-Keywords | Engineered substrate, InP, Opto electronics, Recycling, RF |
| Index-Keywords | Gallium arsenide, Germanium, Manufacture, Recycling, Sapphire, Semiconducting gallium, Semiconductor device manufacture, Semiconductor quantum wells, Direct bonding, Engineered-substrate, Layer transfer, Lift offs, Multi quantum wells, New functions, RF applications, Threading dislocation, Substrates |
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| Lien vers article | Link |