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Silicon anodization as a new way to transfer 3D nano-imprinted pattern into a substrate

Publié le 29 mars 2018
Silicon anodization as a new way to transfer 3D nano-imprinted pattern into a substrate
Auteurs
Nouri L., Posseme N., Landis S., Milesi F., Gaillard F.-X., Mariolle D., Licitra C.
Year2017-0082
Source-TitleECS Transactions
Affiliations
CEA-Leti, Minatec, 17 rue des Martyrs, Grenoble Cedex 9, France
Abstract
3D complex structures are nowadays very challenging and require many complicated and expensive manufacturing steps. This work presents a new technique that allows obtaining 3D structures, on silicon based materials, in three steps: First, nano-imprint lithography defines a 3D pattern, then ion implantation step transfers the pattern image onto the subjacent layer and finally wet etching reveals the implanted areas. The concept has been proven on 2D patterns as well as 3D patterns. Physical, chemical and morphological characterizations have been investigated to understand the mechanisms involved in this process. © The Electrochemical Society.
Author-Keywords
 
Index-Keywords
Ion implantation, 2D patterns, 3d patterns, 3D Structure, Complex structure, Morphological characterization, Pattern images, Silicon anodization, Silicon-based materials, Nanoimprint lithography
ISSN19385862
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