Fracture in Epitaxial InP on Si for InGaAs on Insulator Fabrication via Smart Cut™
| Auteurs | Mazen F., Sollier S., Madeira F., Darras F.X., Rochat N., Barnes J.P., Widiez J., Veytizou C., Gaudin G., Guissi S., Colombeau B. |
| Year | 2017-0187 |
| Source-Title | Proceedings of the International Conference on Ion Implantation Technology |
| Affiliations | Université Grenoble Alpes, CEA, LETI, MINATEC-Campus, Grenoble, France, SOITEC, Bernin, France, Applied Materials-VSE, Gloucester, MA, United States, Applied Materials, Sunnyvale, CA, United States |
| Abstract | This paper reports on our recent developments to obtain InGaAs-OI substrates via Smart Cut™. A focus is made on the fracture step in the InP buffer layer of the InGaAs/InP/Si epitaxial donor stack. We show that ion implantation temperature has a strong impact on the hydrogen profile and the nature of hydrogenated complexes formed and hence on the fracture mechanism. A favorable implantation temperature range is found between [0°C and 100°C]. Finally, by combining the implantation/fracture process identified with appropriate bonding and finishing process, a high quality 300 mm InGaAs-OI wafer with InGaAs top layer of a few tens of nanometers is obtained. © 2016 IEEE. |
| Author-Keywords | blistering, hydrogen implantation, InGaAs, InP, layer transfer |
| Index-Keywords | Fracture, Ion implantation, Ions, Silicon wafers, Wafer bonding, blistering, Finishing process, Fracture mechanisms, High quality, Hydrogen implantation, Implantation temperature, InGaAs, Layer transfer, Semiconducting indium |
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