Tunnel FET based refresh-free-DRAM
| Auteurs | Gupta N., Makosiej A., Vladimirescu A., Amara A., Anghel C. |
| Year | 2017-0230 |
| Source-Title | Proceedings of the 2017 Design, Automation and Test in Europe, DATE 2017 |
| Affiliations | MINARC Laboratory, Institut Superieur d'Electronique de Paris (ISEP), France, LETI, Commissariat À l'Energie Atomique et Aux Energies Alternatives (CEA-LETI), France |
| Abstract | A refresh free and scalable ultimate DRAM (uDRAM) bitcell and architecture is proposed for embedded application. uDRAM 1T1C bitcell is designed using access Tunnel FETs. Proposed design is able to store the data statically during retention eliminating the need for refresh. This is achieved using negative differential resistance property of TFETs and storage capacitor leakage. uDRAM allows scaling of storage capacitor by 87% and 80% in comparison to DDR and eDRAMs, respectively. Bitcell area of 0.0275?m2 is achieved in 28nm FDSOI-CMOS and is scalable further with technology shrink. Estimated throughput gain is 3.8% to 18% in comparison to CMOS DRAMs by refresh removal. © 2017 IEEE. |
| Author-Keywords | DRAM, EDRAM, Metal-insulator-metal (MIM) capacitors, Tunnel FET |
| Index-Keywords | CMOS integrated circuits, Digital storage, Field effect transistors, Metal insulator boundaries, MIM devices, Bitcell, EDRAM, Embedded application, Estimated throughput, Metal insulator metal capacitor (MIM), Negative differential resistances, Storage capacitor, Tunnel FET, Dynamic random access storage |
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