Effect of passivation annealing on the electromigration properties of hybrid bonding stack
| Auteurs | Jourdon J., Moreau S., Bouchu D., Lhostis S., Bresson N., Guiheux D., Beneyton R., Renard S., Fremont H. |
| Year | 2017-0254 |
| Source-Title | IEEE International Reliability Physics Symposium Proceedings |
| Affiliations | STMicroelectronics, 850 rue Jean Monnet, Crolles Cedex, France, University of Bordeaux-IMS Laboratory, Bat A31-351 cours de la Libération, Talence, France, CEA, LETI, MINATEC Campus, 17 rue des Martyrs, Grenoble Cedex 9, France |
| Abstract | This paper presents electromigration results on a hybrid bonding-based test vehicle to study the impact of bonding and passivation annealings on backend of line robustness. Black's parameters extraction leads to typical values of Cu-based interconnects. Electromigration lifetime remains the same whatever the bonding annealing conditions but a significant influence of passivation annealing is observed. Chemical analyses evidence the effect of the annealing atmosphere. A discussion is lead on the chemical species concentration at different locations of the stack and the reduction of the Time to Failure with passivation final annealing. © 2017 IEEE. |
| Author-Keywords | 3D BSI stacked, 3D integration, deuterium, electromigration, Hybrid bonding, passivation annealing, reliability, SIMS |
| Index-Keywords | Annealing, Chemical analysis, Deuterium, Electromigration, Passivation, Reliability, Secondary ion mass spectrometry, 3-D integration, 3D BSI stacked, Annealing atmospheres, Annealing condition, Back end of lines, Chemical species concentrations, Hybrid bonding, Parameters extraction, Chemical bonds |
| ISSN | 15417026 |
| Lien vers article | Link |