Low power consumption and high-speed ge receivers
| Auteurs | Virot L., Benedikovic D., Szelag B., Alonso-Ramos C., Hartmann J.M., Crozat P., Cassan E., Marris-Morini D., Baudot C., Boeuf F., Fédéli J.M., Kopp C., Vivien L. |
| Year | 2017-0021 |
| Source-Title | Optics InfoBase Conference Papers |
| Affiliations | Centre for Nanoscience and Nanotechnology (C2N), CNRS UMR 9001, Université Paris Sud, Université Paris-Saclay, site d'Orsay, Orsay Cedex, France, University Grenoble Alpes and CEA, LETI, Minatec Campus, Grenoble Cedex, France, STMicroelectronics, Silicon Technology Development, Crolles, France |
| Abstract | A new Si/Ge/Si heterojunction based waveguide photodetector has been demonstrated in order to reduce the fabrication cost, increase the responsivity, and improve process robustness. State of the art characteristics in terms of dark current, responsivity and bandwidth have been obtained. Furthermore, such photodetectors were characterized in avalanche mode in order to improve the sensitivity and reduce the overall power consumption of the optical circuit. © 2017 OSA. |
| Author-Keywords | |
| Index-Keywords | Electric power utilization, Heterojunctions, Optical communication, Optical fiber fabrication, Optical fibers, Photodetectors, Photons, Avalanche mode, Fabrication cost, Low-power consumption, Optical circuits, Process robustness, Responsivity, State of the art, Waveguide photodetectors, Optical fiber communication |
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| Lien vers article | Link |