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A 100 MHz PRF IR-UWB CMOS Transceiver with Pulse Shaping Capabilities and Peak Voltage Detector

Publié le 29 mars 2018
A 100 MHz PRF IR-UWB CMOS Transceiver with Pulse Shaping Capabilities and Peak Voltage Detector
Auteurs
Vauche R., Muhr E., Fourquin O., Bourdel S., Gaubert J., Dehaese N., Meillere S., Barthelemy H., Ouvry L.
Year2017-0263
Source-TitleIEEE Transactions on Circuits and Systems I: Regular Papers
Affiliations
CNRS, IM2NP, Aix-Marseille University, Marseille, France, Université de Toulon, La Garde, France, CNRS, IMEP-LAHC, Université Grenoble-Alpes, Grenoble, France, Université Grenoble Alpes, Grenoble, France, CEA-Leti-MINATEC, Grenoble, France
Abstract
This paper presents a high-rate IR-UWB transceiver chipset implemented in a 130-nm CMOS technology for WBAN and biomedical applications in the 3.1-4.9 GHz band. The transmitter is based on a pulse synthesizer and an analytical up-converted Gaussian pulse is used to predict its settings. Its measured peak-To-peak output voltage is equal to 0.9~Vmathrm pp on a 100 \Omega load for a central frequency of 4 GHz, and a supply voltage of 1.2 V, which gives an emitted energy per pulse of 0.64 pJ. The receiver is a non-coherent architecture based on an LNA followed by a peak-voltage detector. A BER of 10-3 is measured for a 3.1-4.9 GHz input peak-To-peak pulse amplitude of 1.1 mV, which corresponds to a sensitivity of-85.8 dBm at 1 Mb/s and gives a communication range estimated to 1.9 m. © 2004-2012 IEEE.
Author-Keywords
IR-UWB, non-coherent receiver, pulse shaping capabilities, Ultra-Wideband CMOS transceiver, WBAN
Index-Keywords
CMOS integrated circuits, Low noise amplifiers, Medical applications, Radio transceivers, Transceivers, Ultra-wideband (UWB), Biomedical applications, Central frequency, CMOS transceivers, Communication range, Energy per pulse, Non-coherent architecture, Peak-voltage detectors, UWB transceiver, Pulse shaping
ISSN15498328
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