Improved electrical performance thanks to Sb and N Doping in Se-rich GeSe-Based OTS selector devices
| Auteurs | Verdy A., Navarro G., Sousa V., Noé P., Bernard M., Fillot F., Bourgeois G., Garrione J., Perniola L. |
| Year | 2017-0274 |
| Source-Title | 2017 IEEE 9th International Memory Workshop, IMW 2017 |
| Affiliations | CEA, LETI, MINATEC Campus, 17 rue des Martyrs, Grenoble Cedex 9, France |
| Abstract | In this paper, we investigate the impact of Sb and N doping in Se-rich GeSe based Ovonic Threshold Switching (OTS) selector devices, targeting crossbar memory applications. Through physico-chemical analysis and electrical characterization we demonstrate that Sb doping allows low threshold voltage switching operations, while N doping improves the OFF state resistance stability of Se-rich GeSe based selector devices. Thus, we are able to demonstrate an endurance up to 106 cycles, an ON/OFF current ratio of - 108 and reading selectivity of 104. These values are among the best reported in the literature for an OTS selector. The described material engineering makes Se-rich GeSe based materials suitable for Back-End of Line (BEOL) selector integrations, such as resistive memory crossbar arrays up to 1Mb. © 2017 IEEE. |
| Author-Keywords | |
| Index-Keywords | Characterization, Chemical analysis, Chemical operations, Chemical stability, Back end of lines, Electrical characterization, Electrical performance, Low threshold voltage, Material engineering, ON/OFF current ratio, Physico-chemical analysis, Threshold switching, Antimony |
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