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Improved electrical performance thanks to Sb and N Doping in Se-rich GeSe-Based OTS selector devices

Publié le 29 mars 2018
Improved electrical performance thanks to Sb and N Doping in Se-rich GeSe-Based OTS selector devices
Auteurs
Verdy A., Navarro G., Sousa V., Noé P., Bernard M., Fillot F., Bourgeois G., Garrione J., Perniola L.
Year2017-0274
Source-Title2017 IEEE 9th International Memory Workshop, IMW 2017
Affiliations
CEA, LETI, MINATEC Campus, 17 rue des Martyrs, Grenoble Cedex 9, France
Abstract
In this paper, we investigate the impact of Sb and N doping in Se-rich GeSe based Ovonic Threshold Switching (OTS) selector devices, targeting crossbar memory applications. Through physico-chemical analysis and electrical characterization we demonstrate that Sb doping allows low threshold voltage switching operations, while N doping improves the OFF state resistance stability of Se-rich GeSe based selector devices. Thus, we are able to demonstrate an endurance up to 106 cycles, an ON/OFF current ratio of - 108 and reading selectivity of 104. These values are among the best reported in the literature for an OTS selector. The described material engineering makes Se-rich GeSe based materials suitable for Back-End of Line (BEOL) selector integrations, such as resistive memory crossbar arrays up to 1Mb. © 2017 IEEE.
Author-Keywords
 
Index-Keywords
Characterization, Chemical analysis, Chemical operations, Chemical stability, Back end of lines, Electrical characterization, Electrical performance, Low threshold voltage, Material engineering, ON/OFF current ratio, Physico-chemical analysis, Threshold switching, Antimony
ISSN 
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