Back-side integration of Hybrid III-V on Silicon DBR lasers
| Auteurs | Durel J., Bakir B.B., Jany C., Cremer S., Hassan K., Szelag B., Bria T., Larrey V., Sanchez L., Brianceau P., Dallery J.-A., Guiavarch R., Card T., Thibon R., Broquin J.-E., Boeuf F. |
| Year | 2017-0277 |
| Source-Title | 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 |
| Affiliations | STMicroelectronics, 850 rue Jean Monnet, Crolles Cedex, France, CEA-LETI, Minatec, 17 rue des Martyrs, Grenoble Cedex 9, France, Univ. Grenoble Alpes, IMEP-LAHC, Grenoble, France, Vistec Electron Beam GmbH, Ilmstrasse 4, Jena, Germany |
| Abstract | In this paper we demonstrate the monolithic integration of a fully CMOS compatible hybrid DBR laser on the backside of a SOI wafer. This innovative approach allowed implementing CMOS compatible electric interconnects and optical sources on a same chip. The optical characterizations confirm the single wavelength behavior of the realized devices which present a SMSR higher than 35 dB and can be tuned over 4 nm, opening the route to a fully integrated optical transceiver on a Si platform. © 2017 IEEE. |
| Author-Keywords | |
| Index-Keywords | CMOS integrated circuits, Optical transceivers, Silicon wafers, VLSI circuits, CMOS Compatible, Fully integrated, Hybrid-iii, Innovative approaches, Monolithic integration, Optical characterization, Single wavelength, SOI wafers, DBR lasers |
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