Impact of carrier lifetime on Z2-FET operation
| Auteurs | Parihar M.S., Lee K.H., Bawedin M., Lacord J., Martinie S., Barbé J.-C., Xu Y., Taur Y., Cristoloveanu S. |
| Year | 2017-0307 |
| Source-Title | Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings |
| Affiliations | Univ. Grenoble Alpes, IMEP-LAHC, Grenoble INP, Minatec, CNRS, Grenoble, France, CEA, LETI, Minatec Campus, Grenoble, France, Nanjing Univ. of Posts and Telecommunications, China, Univ. of California, San Diego, CA, United States |
| Abstract | A systematic study to model and characterize the band-modulation Z2-FET device is developed. Emphasis is given on the effect of carrier lifetime which is the key parameter. It provides guidelines to design Z2-FETs for sharp switching, ESD protection and 1T-DRAM applications. We provide new insights of the relation between carrier generation/recombination and electrostatic barriers. © 2017 IEEE. |
| Author-Keywords | band modulation, carrier lifetime, hysteresis, SOI, Z2-FET |
| Index-Keywords | Hysteresis, Modulation, 1t drams, Carrier generation, Electrostatic barriers, ESD protection, Systematic study, Z^2-FET, Carrier lifetime |
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| Lien vers article | Link |