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Sensitivity analysis of C-V global variability for 28 nm FD-SOI

Publié le 29 mars 2018
Sensitivity analysis of C-V global variability for 28 nm FD-SOI
Auteurs
Pradeep K., Poiroux T., Scheer P., Gouget G., Juge A., Ghibaudo G.
Year2017-0313
Source-TitleJoint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings
Affiliations
STMicroelectronics, Crolles Site, 850 rue Jean Monnet, Crolles, France, IMEP-LAHC, MINATEC Campus, 3 Parvis Louis Néel, Grenoble, Cedex 1, France, CEA, LETI, MINATEC Campus, Grenoble Cedex 9, France
Abstract
This work describes a statistical model for the C-V global variability of 28 nm FD-SOI using the sensitivities of the capacitance to each process parameter calculated using Leti-UTSOI compact model. The percentage contribution of each process parameter to the total C-V variation is explored to identify the dominant source of variation at different bias conditions. The proposed model provides an alternate method to directly extract the variance of the process parameters from the measured C-V variability. © 2017 IEEE.
Author-Keywords
characterization, FD-SOI, global variability, Leti-UTSOI, modeling, sensitivity analysis, split C-V
Index-Keywords
Characterization, Finite difference method, Models, Alternate method, Bias conditions, Compact model, FD-SOI, Global variability, Leti-UTSOI, Process parameters, Statistical modeling, Sensitivity analysis
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