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A fully-integrated SOI CMOS complex-impedance detector for matching network tuning in LTE power amplifier

Publié le 29 mars 2018
A fully-integrated SOI CMOS complex-impedance detector for matching network tuning in LTE power amplifier
Auteurs
Nicolas D., Serhan A., Giry A., Parra T., Mercier E.
Year2017-0341
Source-TitleDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
Affiliations
CEA, LETI, MINATEC Campus, Grenoble, France, CNRS, LAAS, Univ. Toulouse, UPS, Toulouse, France
Abstract
This paper describes a wide dynamic-range and accurate complex-impedance detector for adaptive power amplifier load tuning systems. The detector IC, fabricated in a 130 nm SOI technology, consumes 7mA under 2.5V supply voltage. It can handle LTE signals with an input power from 0 dBm up to 40 dBm thanks to its variable attenuator system. System level measurements show that the detector has a very good accuracy in sensing the mismatched load impedance value in the VSWR region from 2:1 to 6:1. © 2017 IEEE.
Author-Keywords
adaptive, impedance detector, LTE, mismatch, power amplifier, SOI, VSWR tuning
Index-Keywords
CMOS integrated circuits, Complex networks, Power amplifiers, Radio waves, Wireless telecommunication systems, adaptive, Complex impedance, Fully integrated, Impedance detectors, Matching networks, mismatch, Variable attenuators, Wide dynamic range, Tuning
ISSN15292517
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