Frequency fluctuations in mono- and polysilicon resonators: A new limit of detection
| Auteurs | Sansa M., Ouerghi I., Gely M., Alava T., Ernst T., Jourdan G., Hentz S. |
| Year | 2017-0362 |
| Source-Title | TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems |
| Affiliations | Université Grenoble Alpes, F-38000 Grenoble, France, CEA, LETI, Minatec Campus, F-38054 Grenoble, France |
| Abstract | It has been recently shown that resonance frequency fluctuations degrade the limit-of-detection of high-purity monocrystalline resonating sensors. A thorough literature study has shown this is likely the case for a wide variety of resonators. Here we provide additional insight into the physical source of these fluctuations: our results suggest that defect motion in the crystalline structure of the material is not a major source of frequency fluctuations in silicon resonators. © 2017 IEEE. |
| Author-Keywords | frequency stability, mass sensor, MEMS, NEMS, piezoresistive |
| Index-Keywords | Actuators, Frequency stability, MEMS, Microsystems, NEMS, Resonators, Transducers, Crystalline structure, Frequency fluctuation, Literature studies, Mass sensor, Piezo-resistive, Polysilicon resonators, Resonance frequencies, Resonating sensors, Solid-state sensors |
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