Unified self-heating effect model for advanced digital and analog technology and thermal-aware lifetime prediction methodology
| Auteurs | Jiang H., Shen L., Shin S.H., Xu N., Du G., Nguyen B.-Y., Faynot O., Alam M.A., Zhang X., Liu X.Y. |
| Year | 2017-0370 |
| Source-Title | Digest of Technical Papers - Symposium on VLSI Technology |
| Affiliations | Institute of Microelectronics, Peking University, Beijing, China, School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, United States, University of California, Berkeley, United States, Soitec, Austin, TX, United States, CEA-Leti Minatec, Grenoble Cedex 9, France |
| Abstract | Self-heating effect (SHE) has become a significant concern for device performance, variability and reliability co-optimization due to more confined layout geometry and lower-thermal-conductivity materials adopted in advanced transistor technology, which substantially impacts the integrated circuit (IC)'s design schemes. In this work, a new methodology for evaluation of SHE in both digital and analog circuits is demonstrated by using pulse-aware and existing sine-aware analytical models respectively. Correlating SHE to physics-based thermal-aware reliability models provides insights for design and sign-offs of advanced digital and analog ICs. © 2017 JSAP. |
| Author-Keywords | |
| Index-Keywords | Integrated circuit design, Thermal conductivity, VLSI circuits, Analog technology, Co-optimization, Design scheme, Device performance, Lifetime prediction, Physics-based, Reliability model, Self-heating effect, Analog integrated circuits |
| ISSN | 7431562 |
| Lien vers article | Link |