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Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi-bulk InGaN buffer for blue to green regime emission

Publié le 29 mars 2018
Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi-bulk InGaN buffer for blue to green regime emission
Auteurs
Alam S., Sundaram S., li X., Jamroz M.E., El Gmili Y., Robin I.C., Voss P.L., Salvestrini J.-P., Ougazzaden A.
Year2017-0385
Source-TitlePhysica Status Solidi (A) Applications and Materials Science
Affiliations
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, United States, Georgia Tech-CNRS, UMI 2958, Metz, France, CEA-LETI, Minatec Campus, Grenoble, France, LMOPS, University of Lorraine, EA4423, Metz, France
Abstract
The effect of indium (In) in the barrier of InGaN/GaN multiple quantum well (MQW) has been studied for MQWs with and without semi-bulk InGaN buffer. From simulation, the optimum In content in the barrier with 3–5 nm width is 5–7% to get the optimal material quality and internal quantum efficiency (IQE) of ?65% for 450–480 nm emission range. Simulation shows a reduction of the potential barrier due to band flattening, a more homogeneous distribution of electrons and holes in the active region and subsequently, a more radiative recombination rate with InGaN as barrier layer. Both cathodoluminescence (CL) and photoluminescence (PL) experimental results show a blue-shift of emission wavelength along with an enhancement in the emission intensity when GaN barrier is replaced with InGaN barrier, for a MQW structure both with and without the semi-bulk InGaN buffer. We attribute this blue shift to the reduced polarization mismatch and increased effective bandgap. This InGaN barrier-related improvement in IQE and efficiency droop could be useful for the realization of longer wavelength “green-gap” range LEDs where poor IQE and efficiency droop are more prominent due to high indium (In) in the active region. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Author-Keywords
barrier layer, III-nitride semiconductors, InGaN, light-emitting diodes, MOVPE, multiple quantum well
Index-Keywords
Efficiency, Indium, Light emitting diodes, Metallorganic vapor phase epitaxy, Quantum efficiency, Semiconducting indium compounds, Barrier layers, Electrons and holes, Emission wavelength, Homogeneous distribution, III-nitride semiconductors, InGaN, Internal quantum efficiency, Radiative recombination rate, Semiconductor quantum wells
ISSN18626300
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