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Cu-SnAg Interconnects Evaluation for the Assembly at 10?m and 5?m Pitch

Publié le 29 mars 2018
Cu-SnAg Interconnects Evaluation for the Assembly at 10?m and 5?m Pitch
Auteurs
Taneja D., Volpert M., Lasfargues G., Chambion B., Bouillard B., Jarjayes S., Chaira T., Vandeneynde A., Goiran Y., Henry D., Hodaj F.
Year2017-0387
Source-TitleProceedings - Electronic Components and Technology Conference
Affiliations
CEA LETI, Minatech Campus, Grenoble, France, Univ. Grenoble Alpes, SIMAP, Grenoble, France, CNRS, Grenoble INP, SIMAP, Grenoble, France
Abstract
Several types of interconnects for the finer pitch assembly are currently being investigated across the globe. Here in this paper, a new type of interconnect Ni3Sn4 Interconnect is proposed and evaluated for assembly at 10 pitch and below. The proposed interconnect is compared to traditional solder interconnect. The comparison is done on the basis of shape of the joints in interconnects, the electric yield and mechanical properties. Later, Ni3Sn4 IMC interconnect is also compared to known Cu3Sn IMC Interconnect. © 2017 IEEE.
Author-Keywords
3D Integration, Fine Pitch Assembly, IMC Interconnects, SLID
Index-Keywords
Binary alloys, Copper alloys, Integrated circuit interconnects, Network components, Nickel alloys, Silver alloys, Ternary alloys, 3-D integration, Fine pitch, SLID, Solder interconnect, Tin alloys
ISSN5695503
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