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In situ 2D diffraction as a tool to characterize ferroelectric and piezoelectric thin films

Publié le 29 mars 2018
In situ 2D diffraction as a tool to characterize ferroelectric and piezoelectric thin films
Auteurs
Khamidy N.I., Kovacova V., Bernasconi A., Le Rhun G., Vaxelaire N.
Year2017-0391
Source-TitleMaterials Research Express
Affiliations
Université Grenoble Alpes, Grenoble, France, CEA/LETI, MINATEC Campus, Grenoble, France, European Synchrotron Radiation Facility, Grenoble, France
Abstract
In this paper the application of 2D x-ray diffraction (XRD2) as a technique to characterize in situ during electrical cycling the properties of a ferroelectric and piezoelectric thin film is discussed. XRD2 is one type of XRD on which a 2D detector is used instead of a point detector. This technique enables simultaneous recording of many sample information in a much shorter time compared to conventional XRD. The discussion is focused especially on the data processing technique of the huge data acquired. The methodology to calculate an effective piezoelectric coefficient, analyze the phase and texture, and estimate the domain size and shape is described in this paper. This methodology is then applied to a lead zirconate titanate (PZT) thin film at the morphotropic phase boundary (MPB) composition (i.e. Pb[Zr0.52Ti0.48]O3) with a preferred orientation of (1 0 0). The in situ XRD2 characterization was conducted in the European synchrotron radiation facility (ESRF) in Grenoble, France. Since a high-energy beam with vertical resolution as small as 100 nm was used, a cross-sectional scan of the sample was performed over the entire thickness of the film. From these experimental results, a better understanding on the piezoelectricity phenomena in PZT thin film at MPB composition were achieved, providing original feedback between the elaboration processes and functional properties of the film. © 2017 IOP Publishing Ltd.
Author-Keywords
2D diffraction, Nano-pencil x-ray beam, Piezoelectric, PZT thin films, Synchrotron
Index-Keywords
 
ISSN20531591
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