Investigation of point defects in HfO2 using positron annihilation spectroscopy: Internal electric fields impact
| Auteurs | Alemany M., Chabli A., Oudot E., Pierre F., Desgardin P., Bertin F., Gros-Jean M., Barthe M.F. |
| Year | 2017-0160 |
| Source-Title | Journal of Physics: Conference Series |
| Affiliations | STMicroelectronics, 850 rue Jean Monnet, Crolles, France, Univ. Grenoble Alpes, INES, Le Bourget du Lac, France, Univ. Grenoble Alpes, Grenoble, France, CNRS, CEMHTI UPR3079, Univ. Orléans, Orléans, France, Univ. Grenoble Alpes, Lab. LTM (CEA-LETI/Minatec), Grenoble, France, CEA, LITEN, Department of Solar Technologies, Le Bourget du Lac, France, CEA, LETI, MINATEC Campus, Grenoble, France |
| Abstract | In this work, we report on the PAS characterization of sintered HfO2 bulk ceramic and HfO2 layers deposited with various methods on a silicon substrate with a layer thickness ranging from 25 to 100 nm. PAS measurements are sensitive to the deposition process type and the post-deposition annealing. Chemical and structural characterisations have been performed on the same samples. The PAS results are discussed regarding to the material defects of the different layers. In addition, a built-in electrical field induced by charged defects located at the HfO2/Si interface as well as in the HfO2 layer must be taken into account in the PAS data fitting. Both non-contact internal electrical field measurements and internal electrical field simulations support the PAS finding. © Published under licence by IOP Publishing Ltd. |
| Author-Keywords | |
| Index-Keywords | Deposition, Electric fields, Electric variables measurement, Electrons, Hafnium oxides, Particle beams, Point defects, Positron annihilation spectroscopy, Positrons, Deposition process, Different layers, Electrical field, Electrical field simulations, Internal electric fields, Material defect, Post deposition annealing, Silicon substrates, Defects |
| ISSN | 17426588 |
| Lien vers article | Link |