This paper concerns the study of a temporary bonding process: 3MTM Wafer Support System. This process is dedicated to the handling of thin silicon wafers with a glass carrier bonded with a UV curable polymer. The dismounting process is achieved after a laser treatment. Firstly, the 300 mm bonding process leads to a very homogeneous bonded structure without any bonding defects. The morphology of the bonded structure is mainly dependent of the morphology of the glass. Secondly this process is also compatible with a back – grinding process and the thinned silicon structure can be processed up to 250 °C. When using a blank silicon wafer, the 3MTM dismounting process (laser and peeling) leads to a silicon thin wafer without any cracks, chippings or adhesive traces. Finally the laser process can be removed from the debonding steps and a single mechanical dismounting process can be used. © 2017 Elsevier B.V.