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Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations

Publié le 29 mars 2018
Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations
Auteurs
Nail C., Molas G., Blaise P., Piccolboni G., Sklenard B., Cagli C., Bernard M., Roule A., Azzaz M., Vianello E., Carabasse C., Berthier R., Cooper D., Pelissier C., Magis T., Ghibaudo G., Vallee C., Bedeau D., Mosendz O., De Salvo B., Perniola L.
Year2017-0121
Source-TitleTechnical Digest - International Electron Devices Meeting, IEDM
Affiliations
CEA, LETI, MINATEC Campus, Grenoble, France, IMEP LAHC CNRS, Grenoble, France, LTM CNRS, Grenoble, France, WD San Jose Research Center, United States
Abstract
In this paper we clarify for the first time the correlation between endurance, window margin and retention of Resistive RAM. To this aim, various classes of RRAM (OXRAM and CBRAM) are investigated, showing high window margin up to 1010 cycles or high 300°C retention. From first principle calculations, we analyze the conducting filament composition for the various RRAM technologies, and extract the key filament features. We then propose an analytical model to calculate the dependence between endurance, window margin and retention, linking material parameters to memory characteristics. © 2016 IEEE.
Author-Keywords
 
Index-Keywords
Economic and social effects, Electron devices, Random access storage, Conducting filament, First principle calculations, Material parameter, Trade off, RRAM
ISSN1631918
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