First demonstration of a back-side integrated heterogeneous hybrid III-V/Si DBR lasers for Si-photonics applications
| Auteurs | Durel J., Ben Bakir B., Jany C., Cremer S., Szelag B., Bria T., Larrey V., Sanchez L., Brianceau P., Dallery J.-A., Guiavarch R., Card T., Thibon R., Broquin J.-E., Bouf F. |
| Year | 2017-0122 |
| Source-Title | Technical Digest - International Electron Devices Meeting, IEDM |
| Affiliations | STMicroelectronics, 850 rue Jean Monnet, Crolles Cedex, France, CEA-LETI, Minatec, 17 rue des Martyrs, Grenoble Cedex 9, France, Univ. Grenoble Alpes, IMEP-LAHC, France, CNRS, IMEP-LAHC, Grenoble, France, Vistec Electron Beam GmbH, Ilmstrasse 4, Jena, Germany |
| Abstract | In this paper, we demonstrate for the first time the integration of a III-V/Si hybrid laser on the back-side of a SOI wafer. This integration allows preserving the compatibility with Si-waveguide integration and with CMOS front-side metal interconnects, while leveraging passive and active photonic device design. © 2016 IEEE. |
| Author-Keywords | |
| Index-Keywords | Electron devices, Integration, Photonic devices, Photonics, Silicon wafers, Active photonic devices, Hybrid lasers, Hybrid-iii, Metal interconnects, Si photonics, Si-waveguide, SOI wafers, DBR lasers |
| ISSN | 1631918 |
| Lien vers article | Link |