Fundamental variability limits of filament-based RRAM
| Auteurs | Grossi A., Nowak E., Zambelli C., Pellissier C., Bernasconi S., Cibrario G., Hajjam K.E., Crochemore R., Nodin J.F., Olivo P., Perniola L. |
| Year | 2017-0123 |
| Source-Title | Technical Digest - International Electron Devices Meeting, IEDM |
| Affiliations | 1CEA-LETI, Minatec Campus, Grenoble, France, ENDIF, Univ. of Ferrara, Ferrara, Italy |
| Abstract | While Resistive RAM (RRAM) are seen as an alternative to NAND Flash, their variability and cycling understanding remain a major roadblock. Extensive characterizations of multi-kbits RRAM arrays during Forming, Set, Reset and cycling operations are presented allowing the quantification of the intrinsic variability factors. As a result, the fundamental variability limits of filament-based RRAM in the full resistance range are identified. © 2016 IEEE. |
| Author-Keywords | |
| Index-Keywords | Electron devices, Cycling operations, Intrinsic variabilities, NAND Flash, Resistive rams (RRAM), RRAM |
| ISSN | 1631918 |
| Lien vers article | Link |