SOI technology for quantum information processing
| Auteurs | De Franceschi S., Hutin L., Maurand R., Bourdet L., Bohuslavskyi H., Corna A., Kotekar-Patil D., Barraud S., Jehl X., Niquet Y.-M., Sanquer M., Vinet M. |
| Year | 2017-0126 |
| Source-Title | Technical Digest - International Electron Devices Meeting, IEDM |
| Affiliations | CEA, INAC, Grenoble, France, CEA, LETI, Minatec Campus, Grenoble, France, University Grenoble Alpes, Grenoble, France |
| Abstract | We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information - so-called qubits - are encoded in the spin degree of freedom of gate-confined holes in p-type devices. We show how a hole-spin can be efficiently manipulated by means of a microwave excitation applied to the corresponding confining gate. The hole spin state can be read out and reinitialized through a Pauli blockade mechanism. The studied devices are derived from silicon nanowire field-effect transistors. We discuss their prospects for scalability and, more broadly, the potential advantages of FDSOI technology. © 2016 IEEE. |
| Author-Keywords | |
| Index-Keywords | Degrees of freedom (mechanics), Electron devices, Field effect transistors, Quantum optics, Fully depleted silicon-on-insulator, Microwave excitations, Of quantum-information, Quantum processors, Quantum-information processing, Recent progress, Silicon nanowire field-effect transistors, SOI technology, Silicon on insulator technology |
| ISSN | 1631918 |
| Lien vers article | Link |