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Data retention extraction methodology for perpendicular STT-MRAM

Publié le 29 mars 2018
Data retention extraction methodology for perpendicular STT-MRAM
Auteurs
Tillie L., Nowak E., Sousa R.C., Cyrille M.-C., Delaet B., Magis T., Persico A., Langer J., Ocker B., Prejbeanu I.-L., Perniola L.
Year2017-0124
Source-TitleTechnical Digest - International Electron Devices Meeting, IEDM
Affiliations
CEA-LETI, Minatec Campus, Grenoble, France, SPINTEC, Univ., Grenoble Alpes, CEA, CNRS, Grenoble, France, Singulus Technologies AG, Kahl Am Main, Germany
Abstract
While perpendicular STT-MRAM are seen as a promising next-generation memory, retention becomes critical and must be characterized precisely. Four extraction methods are explained taking special emphasize on accuracy and precision. They are then applied from single cell to kb-array, from 50 to 250 nm diameter cells and up to 235°C in order to show the limitations and advantages of each method. © 2016 IEEE.
Author-Keywords
 
Index-Keywords
Electron devices, Extraction, Magnetic recording, Accuracy and precision, Data retention, Extraction method, Single cells, STT-MRAM, MRAM devices
ISSN1631918
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