22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications
| Auteurs | Carter R., Mazurier J., Pirro L., Sachse J.-U., Baars P., Faul J., Grass C., Grasshoff G., Javorka P., Kammler T., Preusse A., Nielsen S., Heller T., Schmidt J., Niebojewski H., Chou P.-Y., Smith E., Erben E., Metze C., Bao C., Andee Y., Aydin I., Morvan S., Bernard J., Bourjot E., Feudel T., Harame D., Nelluri R., Thees H.-J., M-Meskamp L., Kluth J., Mulfinger R., Rashed M., Taylor R., Weintraub C., Hoentschel J., Vinet M., Schaeffer J., Rice B. |
| Year | 2017-0128 |
| Source-Title | Technical Digest - International Electron Devices Meeting, IEDM |
| Affiliations | GLOBALFOUNDRIES Fab1 LLC and Co. KG, Wilschdorfer Landstrasse 101, Dresden, 01109, Germany, CEA-LETI Minatec, 17 rue des Martyrs, Grenoble Cedex 9, France |
| Abstract | 22FDX™ is the industry's first FDSOI technology architected to meet the requirements of emerging mobile, Internet-of-Things (IoT), and RF applications. This platform achieves the power and performance efficiency of a 16/14nm FinFET technology in a cost effective, planar device architecture that can be implemented with ?30% fewer masks. Performance comes from a second generation FDSOI transistor, which produces nFET (pFET) drive currents of 910??/?m (856??/?m) at 0.8 V and 100nA/?m Ioff. For ultra-low power applications, it offers low-voltage operation down to 0.4V Vmin for 8T logic libraries, as well as 0.62V and 0.52V Vmin for high-density and high-current bitcells, ultra-low leakage devices approaching 1pA/?m Ioff, and body-biasing to actively trade-off power and performance. Superior RF/Analog characteristics to FinFET are achieved including high fT/fMAx of 375GHz/290GHz and 260GHz/250GHz for nFET and pFET, respectively. The high fMAx extends the capabilities to 5G and milli-meter wave (>,24GHz) RF applications. © 2016 IEEE. |
| Author-Keywords | |
| Index-Keywords | Cost effectiveness, Economic and social effects, Electron devices, FinFET, Drive currents, Internet of Things (IOT), Low voltage operation, Performance efficiency, RF applications, Second generation, Ultra low leakages, Ultralow power application, Internet of things |
| ISSN | 1631918 |
| Lien vers article | Link |