Instantaneous frequency measurement for IR-UWB signal in CMOS 130 nm
| Auteurs | Goavec A., Vauche R., Gaubert J., Hameau F., Zarudniev M., Mercier E. |
| Year | 2017-0147 |
| Source-Title | 2016 IEEE International Conference on Electronics, Circuits and Systems, ICECS 2016 |
| Affiliations | Aix-Marseille Université, CNRS, Université de Toulon, IM2NP UMR 7334, Marseille, France, Univ. Grenoble Alpes, Grenoble, France, CEA, LETI, MINATEC Campus, Grenoble, France |
| Abstract | For about a decade, Ultra-WideBand applications demonstrated its interest for radio and imaging applications in the [3.1-4.9 GHz] frequency band. In order to carry out such applications in other frequency domains, the instantaneous frequency of the impulse signal is commonly used. This paper describes the design of an Instantaneous Frequency Measurement system in order to show its feasibility for Ultra-WideBand impulse radio radar and imaging applications. The integrated part of the system is constituted of a full-wave rectifier, a delay cell and an analog multiplier. These devices were designed in CMOS 130 nm technology and consumes 95.6 mW for a supply voltage of 1.2V. The post-layout simulations are shown in comparison to theoretical Matlab simulations in order to validate the proposed technique. © 2016 IEEE. |
| Author-Keywords | Impulse Radio, Instantaneous Frequency Measurement, Ultra-WideBand |
| Index-Keywords | CMOS integrated circuits, Frequency bands, Impulse noise, MATLAB, Radio, Ultra-wideband (UWB), Imaging applications, Impulse Radio, Instantaneous frequency, Instantaneous Frequency Measurement systems, Instantaneous frequency measurements, Post layout simulation, Ultra wideband impulse radio, Ultrawideband applications, Electric frequency measurement |
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