Leakage current conduction in metal gate junctionless nanowire transistors
| Auteurs | Oproglidis T.A., Karatsori T.A., Barraud S., Ghibaudo G., Dimitriadis C.A. |
| Year | 2017-0222 |
| Source-Title | Solid-State Electronics |
| Affiliations | Department of Physics, Aristotle University of Thessaloniki, Thessaloniki, Greece, IMEP-LAHC, INPG – Minatec, 3 Parvis Louis Néel, Grenoble, France, CEA-LETI Minatec, 17 rue des Martyrs, Grenoble, France |
| Abstract | In this paper, the experimental off-state drain leakage current behavior is systematically explored in n- and p-channel junctionless nanowire transistors with HfSiON/TiN/p+-polysilicon gate stack. The analysis of the drain leakage current is based on experimental data of the gate leakage current. It has been shown that the off-state drain leakage current in n-channel devices is negligible, whereas in p-channel devices it is significant and dramatically increases with drain voltage. The overall results indicate that the off-state drain leakage current in p-channel devices is mainly due to trap-assisted Fowler-Nordheim tunneling of electrons through the gate oxide of electrons from the metal gate to the silicon layer near the drain region. © 2017 |
| Author-Keywords | Fowler-Nordheim tunneling, Junctionless, Nanowire transistor, Off-state leakage current |
| Index-Keywords | Drain current, Electric currents, Field emission, Gate dielectrics, Nanowires, Current conduction, Drain leakage current, Gate-leakage current, Junctionless, N-channel devices, Nanowire transistors, Off-state leakage current, Polysilicon gates, Leakage currents |
| ISSN | 381101 |
| Lien vers article | Link |