Impact of series resistance on the operation of junctionless transistors
| Auteurs | Jeon D.-Y., Park S.J., Mouis M., Barraud S., Kim G.-T., Ghibaudo G. |
| Year | 2017-0170 |
| Source-Title | Solid-State Electronics |
| Affiliations | IMEP-LAHC, Grenoble INP, Minatec, BP 257, Grenoble, France, CEA-LETI Minatec, 17 rue des Martyrs, Grenoble, France, School of Electrical Engineering, Korea University, Seoul, South Korea |
| Abstract | Transconductance (gm) and its derivative (dgm/dVg) of junctionless transistors (JLTs), considered as a possible candidate for future CMOS technology, show their unique operation properties such as bulk neutral and surface accumulation conduction. However, source/drain series resistance (Rsd) causes significant degradation of intrinsic gm and dgm/dVg behavior in JLTs. In this letter, the Rsd effects on the operation of JLTs were investigated in detail and also verified with analytical modeling equations. This work provides helpful information for a better understanding of the operation mechanism of JLTs with de-embedded Rsd effects. © 2016 Elsevier Ltd |
| Author-Keywords | Analytical modeling, Bulk neutral conduction, De-embedded Rsd effects, Junctionless transistors (JLTs), Series resistance (Rsd) |
| Index-Keywords | Analytical models, CMOS technology, De-embedded Rsd effects, Junctionless transistors, Operation mechanism, Series resistances, Source/drain series resistances, Surface accumulation, Electric resistance |
| ISSN | 381101 |
| Lien vers article | Link |