Reducing our carbon footprint with GaN-on-Si
GaN-on-Si (gallium-nitride-on-silicon) wide bandgap semiconductor technology is pushing the limits of high power semiconductors by making systems more energy efficient.
New technologies must be implemented to reduce system energy consumption in the interest of facilitating the energy transition and limiting carbon dioxide emissions.
Objective
To miniaturize converters and increase energy efficiency, while reducing costs. Electric vehicles, motor controls and power supplies in industry represent principal growth vectors.
CMOS-compatible GaN-on-Si technology on 200 mm silicon wafers fulfills the demands of any medium power application at voltages between 100V and 1200V. Leti implements cutting-edge GaN-on-Si epitaxy equipment (600V and 1200V) and technology for producing diodes and 600V GaN-on-Si power transistors (HEMT) that are much more compact and five times more powerful than silicon technology.
This coplanar technology (CMOS like) enables us to make the power component "smarter" with integrated monolithic functions, such as a bidirectional component (current/voltage), or detection and safety functions (temperature, voltage, current, etc.) orcontrol functions (driver), currently impossible with silicon power technology.