Energy Efficiency of ICTs
ICT energy efficiency is one of the greater challenges of our time. According to worst case scenarios, ICTs could represent up to 51% of the world's energy consumption and 23% of greenhouse gases in 2030.
Energy consumption of high-performance computer systems, already at 20 MW, is a major technological and economic issue. To compensate the increase in power consumption of mobile devices that accompanies the increase in their computing capacity, long term research is ongoing to improve battery performance. Short term solutions must thus include drastically lowering the energy budget of intelligent systems used in the Internet of Things (T) to guarantee operation below 1 mW. This includes lowering standby power consumption, as T devices operate at very low duty cycles. Rethinking the whole family of technologies, from devices to applications, will allow us to meet these challenges and maximize energy efficiency.
Leti is developing technologies and architectures to address ICT power management such as low-power CMOS(FD-SOI, TFET, etc.)neuromorphic circuits based on m memories, computation modules based on 3D integration and silicon-based photonics, stacked intelligent 3D imagers, etc. The capacity of both hardware and software to adapt dynamically to environmental conditions and different application requirements is also under study to curtail energy waste.
Publications disponibles s les rapports scientifiques :
[1]Beigné, E.; n, A.; Miro-s, I.; Wilson, R.; Flatresse, P.; Abouzeid, F.; Benoist, T.; Bernard, C.; Bernard, S.; Billoint, O.; Clerc, S.; Giraud, B.; Grover, A.; Le z, J.; Noel, J.-P.; Thomas, O. & Thonnart, Y. (2015), 'A 460 MHz at 397 mV, 2.6 GHz at 1.3 V, 32 bits VLIW DSP g FMAX Tracking', IEEE Journal of Solid-State Circuits 50(1), 125-136
[2] Belleville, M.; Thomas, O.; n, A. & y, F. (2013), 'Designing digital circuits with nano-scale devices: Challenges and opportunities', Solid-State Electronics 84, 38-45
[3] Resistive Memories for Ultra-Low-Power embedded computing design, E Vianello, O Thomas, G Molas, O Turkyilmaz, N ć, D Garbin, .et al. , Electron Devices Meeting (IEDM), 2014 IEEE International, 6.3. 1-6.3. 4