The event began with a seminar on the theme of “Breakthroughs in Microelectronics: Moving towards a Sustainable Future", during which CEA-Leti presented its vision and activities to meet sustainable development issues in the sector. The guest of honor, SOITEC's CEO Pierre Barnabé, presented the roadmap for his company, a Leti spin-off that has become a world leader in the field of innovative materials for semiconductors.

The event was also marked by the signing of a Memorandum of Cooperation (MoC) with the Leading Edge Semiconductor Technology Center (LSTC) for a year. This research platform brings together key Japanese universities and organizations who work in the field of semiconductors. A research arm for Rapidus, a company involved in researching and developing technologies, the platform targets the new semiconductor generation.

Leti and the LSTC wish to establish a long-term and sustainable collaboration in different advanced semiconductor fields, including materials, devices, processes, and technology. The aim is to further strengthen global collaboration in the semiconductor industry over the next decade and to jointly define long-term R&D roadmaps.

The keynote addresses of the French Ambassador to Japan, Sébastien Dauvé, and Tetsuro Higashi, Rapidus Chairman of the Board and LSTC President, then opened the reception, which was a chance for many conversations between CEA-Leti teams and Japanese guests.

The event was an excellent opportunity for bringing together the Japanese semiconductor ecosystem, in which CEA-Leti now has a place, through ambitious collaborations with relevant stakeholders.  The edition also gave legitimacy to CEA-Leti in Japan as a global institute for excellence in microelectronics, capable of transferring its innovations to industry.

On the sidelines of the event, thirty meetings were held throughout the week for bilateral exchanges with major Japanese industrial actors in the field of microelectronics.