Julie was first educated at Grenoble INP, specializing in components and nanoscience. The academic exchange she did at Imperial College in London, where she focused on lasers and component physics, was an important step in her journey. She came across ferroelectric memories as part of her thesis and was immediately fascinated.
Ferroelectric memories and their immense potential
Ferroelectric memories based on hafnium oxide are devices capable of retaining information without requiring continuous electric power, making them particularly interesting for low-energy applications. However, several problems prevent their widespread use, such as retention loss over time and the difficulty in reprogramming certain memory cells.
Julie's research has made it possible to better understand the mechanisms involved in the loss of information in ferroelectric memories, and to identify ways of improving their reliability. Most notably, she has been able to quantify the phenomenon in single devices and more complex circuits, highlighting a unique physical origin.
By developing a rigorous methodology to evaluate the retention of data, including modelization for lifespan extrapolation, Julie has not only identified key factors that influence the reliability of ferroelectric memories, but is also offering an electric strategy that facilitates the reprogramming of data, thereby contributing to a better understanding and a significant improvement of these devices..
“I really enjoyed participating in the IRPS conference, not only for the wealth of technical content, but also for the atmosphere: everyone comes out feeling like they've won, whether or not they have been awarded a prize."
Julie's findings open new perspectives for the development of better performing, more reliable ferroelectric memories. Her breakthroughs could find applications in the field of IoT, embedded electronics, and mass data storage.