Don’t miss last CEA-Leti's results in micro-nanoeclectronic simulations during the SISPAD 2022
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We are presenting 7 articles this year: 5 oral presentations and 2 posters, which positions Leti as one of the main contributors to this conference, which remains the reference conference in the field of process and device simulation.
The International Conference on Simulation of Semiconductor Processes and
Devices (SISPAD) provides an international forum for the presentation of
leading-edge research and development results in the field of process and
device simulation. SISPAD is one of the longest-running conferences devoted to
technology computer-aided design (TCAD) and advanced modeling of novel
semiconductor devices and nano-electronic structures.
About CEA-Leti scientific papers and presentations @SISPAD 2022
- Calculation of the mobility in Al2O3/GaN electron channel: effect of p-doping and comparison with experiment, B. Rrustemi et al. (Oral presentation)
- RF simulation platform of QUBit control using FDSOI technology for quantum computing, H. Jacquinot et al. (Oral presentation)
- Ab-initio study of electron mobility in V2O5 via polaron hopping, R. Defrance et al. (Oral presentation)
- Non-Quasi-Static modeling and methodology in Fully Depleted SOI MOSFET for L-UTSOI model, S. Martinie et al. (Oral presentation)
- Coupling a phase field model with electro-thermal solver to simulate PCM intermediate states for neuromorphic computing, O. Cueto et al (Oral presentation)
- Atomic-scale study of silane and hydrogen adsorptions competition during Silicon epitaxy, L. Treps et al. (Poster presentation)
- A generalized, uncertainty-aware neural network potential for GeSbTe with Monte-Carlo dropout, S.-H. Lee et al. (Poster presentation)
- Workshop contribution : Simulation of electron transport in 2D layers and through metal/2D/metal stacks, F. Triozon et al. (Invited)
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