Hafnium-based FeRAM memories
Advanced non-volatile memories
Memories are electronic components used for the temporary storage of data. There are two main categories of memories, stand-alone (e.g. USB key) and embedded memories. Nowadays, embedded solutions are gaining much interest and non-volatile memories appear as the prime choice. In fact, their ability to retain data, even when deprived of power supply, make them critical for many applications.
There are different categories of non-volatile memories. One of them is FeRAM—Ferroelectric Random Access Memory. FeRAMs provide key advantages:
Nouveautés
Current FeRAMs are based on PZT material. However, these technologies have two drawbacks:
To make sure FeRAMs operate at their full potential, CEA-Leti introduced new hafnimum-based materials (HfO2 and HZO). Hafnium-based materials are changing the FeRAM paradigm by offering:
Excellent CMOS compatibility
Flexibility vs. perovskite materials
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Prochaines étapes
CEA-Leti's team has recently demonstrated 16 kbit FeRAM functional arrays in
130 nm and is now working towards more complex demonstrators using 22 FDX
technology. The goal is to have these demonstrations achieved by end of 2023.
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