GaN for Photovoltaics
GaN/Si micro-inverter reduces cost per watt of solar power
What is GaN for Photovoltaics?
Regular silicon-based micro-inverters—the most critical components to take advantages of solar panel performance—have reached their limits. CEA-Leti researchers are now offering 650V & 100V GaN/Si power transistors to reduce the cost and size of solar inverters while increasing compactness:
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high power density: 1.1kW/l (GaN)
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high yield: 97% (GaN) vs. 95% (Si)
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lower parasitic inductance
GaN/Si are power components made of Gallium Nitride on a low cost 8” Silicon substrate. Such components are already in volume production. An improved transistor architecture, called “MIS-gate” has been developed by CEA-Leti and will reach volume production in the coming months.
Applications:
- Building-integrated photovoltaics (BIPV)
- Off-grid power supply systems
What's new?
The integration of a micro-inverter directly into solar panels enable paralleling, making it a strategic component. This micro-inverter helps efficiently convert the 72-cell PV module’s electrical energy into the 230V~50Hz. In fact, CEA-Leti’s GaN/Si power components (MIS-Gate: Metal Insulator Semiconductor) helps deliver superior returns and a built-in MPPT (Maximum Power Point Tracker) maximizes power conversion regardless of the solar irradiation.
Schematic of circuit, micro-inverter picture and measured signals of two stages conversion
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What's next?
This technology will reach the market in 2025-27. Meanwhile, CEA-Leti and CEA-Liten researchers will improve the technology and develop a built-in digital control system. The team will unveil new prototypes in the coming years.