Analytical Drain Current Compact Model in the Depletion Operation Region of Short-Channel Triple-Gate Junctionless Transistors
| Description | |
| Date | |
| Authors | Oproglidis T.A., Tsormpatzoglou A., Tassis D.H., Karatsori T.A., Barraud S., Ghibaudo G., Dimitriadis C.A. |
| Year | 2017-0020 |
| Source-Title | IEEE Transactions on Electron Devices |
| Affiliations | Aristotle University of Thessaloniki, Thessaloniki, Greece, LETI-CEA, Grenoble, France, IMEP-LAHC Laboratory in Minatec, Parvis, Louis Néel 16, Grenoble Cedex, France |
| Abstract | A new charge-based analytical compact model for the drain current of junctionless (JL) triple-gate MOSFETs is presented, which includes the short-channel effects, the saturation velocity overshoot, the series resistance, and the mobility degradation effects. The proposed model consists of a single analytical equation that covers the depletion operation region in which the bulk conduction determines the drain current. The model is supported by experimental measurements in JL nanowire transistors with channel length varying from 95 to 25 nm and doping concentration $2 \times 10^{19}$ cm $^{\mathrm {-3}}$. The overall results reveal the very good accuracy of the proposed analytical compact model, making it suitable for circuit simulation tools. © 1963-2012 IEEE. |
| Author-Keywords | Compact modeling, drain current, junctionless (JL), triple-gate (TG) transistors |
| Index-Keywords | Analytical models, Circuit simulation, Electric resistance, Field effect transistors, MOSFET devices, Analytical equations, Compact model, Doping concentration, junctionless (JL), Junctionless transistors, Mobility degradation, Short-channel effect, Triple gate transistors, Drain current |
| ISSN | 189383 |
| Link | Link |