Cell-to-Cell Fundamental Variability Limits Investigation in OxRRAM Arrays
| Description | |
| Date | |
| Authors | Grossi A., Zambelli C., Olivo P., Nowak E., Molas G., Nodin J.F., Perniola L. |
| Year | 2018-0015 |
| Source-Title | IEEE Electron Device Letters |
| Affiliations | Dipartimento di Ingegneria, Università Degli Studi di Ferrara, Ferrara, Italy, CEA-Leti, Minatec Campus, Grenoble, France |
| Abstract | In this letter, the fundamental variability limits of filament-based OxRRAM are investigated considering different transistor sizes and metal-insulator-metal (MIM) stacks featuring different materials and thicknesses. Cell-to-cell variability is analyzed through an extensive characterization of Forming, Set, and Reset operations on 4-kb OxRRAM arrays. The results obtained in terms of switching voltage variability and resistance variability from cell-to-cell are compared and discussed to identify the variability limiting component as a function of the conduction regime and to understand the impact of transistor MIM stack parameters on variability and performances. © 2017 IEEE. |
| Author-Keywords | HfO, OxRRAM, QPC model, variability |
| Index-Keywords | Computer architecture, Cytology, Electric insulators, Electric resistance, Hafnium oxides, Microprocessor chips, Switches, Transistors, Voltage measurement, Cell-to-cell variability, Conduction regime, HfO2, OxRRAM, Switching voltages, Transistor size, variability, Cells |
| ISSN | 7413106 |
| Link | Link |